What this 25 V N-channel HEXFET delivers on the board
The IRFH5250TRPBF is an Infineon HEXFET N-channel MOSFET rated for 25 V drain-to-source and a continuous drain current of 100 A when the case temperature is held at 25°C — the silicon can carry that, but the 8-PowerVDFN (5x6 mm PQFN) package needs a solid thermal via array under the exposed pad to pull the heat out. At 50 A with 10 V gate drive the max on-resistance is 1.15 mOhm, which keeps conduction losses under 60 mW per amp in a synchronous rectifier leg.
The 1.15 mOhm Rds(on) at Vgs=10 V is the low-side benchmark for a 25 V rail, but the 110 nC total gate charge at 10 V means the driver must source 1.1 A peak to switch in 100 ns. Input capacitance Ciss is 7174 pF at 13 V Vds — that capacitance dominates the miller plateau duration in a hard-switched converter. The drive voltage range (4.5 V to 10 V) allows logic-level gate drive from a 5 V rail, but the Rds(on) at 4.5 V is not specified in the listing — expect a higher on-resistance at reduced gate voltage. For minimum conduction loss, drive at 10 V.
Thermal reality: ambient vs case ratings
Power dissipation is rated 3.6 W at 25°C ambient (no heatsink) and 160 W at 25°C case temperature — that 44× ratio tells you the package thermal resistance to ambient is high without the PCB copper.