IRFH5210TRPBF - Infineon Technologies
MPNIRFH5210TRPBF
End of Life
MOSFET N-CH 100V 10A/55A 8PQFN
$1.59Ref. price · indicative, final on quote
Packaging8-PowerVDFN
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta), 55A (Tc) |
| Power dissipation | 3.6W (Ta), 104W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 4V @ 100µA |
| Rds on (Max) @ id, vgs | 14.9mOhm @ 33A, 10V |
| Gate charge (Qg) (Max) @ vgs | 59 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2570 pF @ 25 V |