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Infineon Technologies IRFH5015TRPBF

IRFH5015TRPBF N-Channel MOSFET, 150 V, 56 A, 8-PQFN

MPNIRFH5015TRPBF
End of Life

Infineon IRFH5015TRPBF HEXFET N-Channel MOSFET, 150 V drain-source, 56 A continuous drain (Tc), 31 mOhm Rds(on) at 34 A, 10 V gate drive, 50 nC gate charge, 8-PQFN (5x6 mm) package, -55 to 150 °C junction temperature.

$1.95Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFH5015TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Ta), 56A (Tc)
Power dissipation3.6W (Ta), 156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id5V @ 150µA
Rds on (Max) @ id, vgs31mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs50 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2300 pF @ 50 V

Product details

150 V, 56 A N-channel — the switching anchor for 48 V and 72 V rails

It comes in an 8-PQFN (5x6 mm) surface-mount package, the 8-PowerTDFN footprint common in mid-power DC-DC converters, motor-drive stages, and battery-management switches. The 150 V rating gives headroom for 48 V and 72 V nominal buses — including the transients on a 48 V telecom rectifier or a 72 V e-bike battery pack. The 56 A continuous drain at Tc lets it handle the full-load current of a 3 kW motor drive or a 2.5 kW DC-DC converter with adequate heatsinking.

Gate charge and switching speed — what the 50 nC Qg means for the driver

Total gate charge is 50 nC at 10 V, and input capacitance (Ciss) is 2300 pF at 50 V Vds. For a 100 kHz switching frequency, the average gate-drive current is 5 mA; the peak current the driver must source for a 10 ns rise time is about 2.3 A. A standard 1 A gate-driver IC will struggle to keep the switching edges clean — budget a 2 A or higher driver for hard-switching topologies. The 156 W power dissipation rating at Tc means the package can handle that loss if the thermal pad is properly soldered to a copper plane — the 8-PQFN exposed paddle is the primary heat path.

Package and thermal — the 8-PQFN footprint

The 8-PowerTDFN case (supplier device package 8-PQFN, 5x6 mm) is a surface-mount package with an exposed thermal pad on the bottom. The 3.6 W dissipation at ambient (Ta) is the free-air limit without a heatsink — for any real load above a few amps, the board copper and airflow are the thermal design.

Frequently asked questions

What is the typical application for IRFH5015TRPBF?

The 150 V, 56 A rating suits it for 48 V and 72 V bus DC-DC converters, motor-drive stages, battery-management switches, and power-supply OR-ing circuits in industrial and automotive environments.