IRFB7740PBF

Infineon Technologies · StrongIRFET™ Series

Infineon StrongIRFET™, IRFB7740PBF, N-Channel MOSFET, 75V Vdss, 87A Id, 7.3mOhm Rds(on) @ 52A 10V, 122nC Qg, TO-220AB, -55°C to 175°C.

Infineon Technologies IRFB7740PBF
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[IN STOCK] In Stock: 50 pcs
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Technical specifications

IRFB7740PBF specifications
Parameter / AttributeSpecification / Value
SeriesStrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C87A (Tc)
Power dissipation143W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.7V @ 100µA
Rds on (Max) @ id, vgs7.3mOhm @ 52A, 10V
Gate charge (Qg) (Max) @ vgs122 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4650 pF @ 25 V

Technical details

75 V StrongIRFET in a TO-220AB — what it carries

Packaged in a through-hole TO-220AB, it delivers 7.3 mOhm maximum on-resistance when driven with 10 V on the gate.

At 7.3 mOhm with a 10 V gate drive, conduction losses stay low even at 52 A load current. The drive voltage window of 6 V to 10 V lets you trade off Rds(on) against gate-drive complexity: 10 V gives the lowest on-resistance; 6 V still works but at higher resistance.

Thermal derating and mounting

The 143 W maximum power dissipation is specified at the case temperature — that number assumes a heatsink with good thermal interface. In a real enclosure, derate the continuous current from 87 A based on the junction-to-case thermal resistance and ambient conditions. The TO-220AB package fits standard clip or screw-mount heatsinks; the through-hole leads suit wave-solder assembly on FR4 or metal-core boards.

It is ROHS3 compliant. The StrongIRFET™ series is a current-production family.

IRFB7740PBF
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