75 V, 183 A N-channel — what this TO-220 carries
The IRFB7734PBF is an N-channel power MOSFET from Infineon's HEXFET® and StrongIRFET™ series, housed in a through-hole TO-220AB package. It is rated for a drain-source voltage of 75 V and a continuous drain current of 183 A at 25 °C case temperature, with a maximum on-resistance of 3.5 mOhm at 100 A and 10 V gate drive. The 270 nC total gate charge at 10 V gives a sense of the drive energy per switching cycle — useful for sizing the gate driver and estimating switching losses in hard-switched topologies. The 175 °C maximum junction temperature allows deployment in high-ambient environments such as motor drives, battery management systems, and industrial DC-DC converters.
Rds(on) and gate charge — the switching pair
The 3.5 mOhm maximum Rds(on) at 100 A and 10 V drives conduction loss in high-current paths.
Temperature range and package
Operating junction temperature spans -55 °C to 175 °C, which covers military and automotive under-hood extremes. The TO-220AB through-hole package suits designs where board-level thermal dissipation through a heatsink is preferred over surface-mount approaches — the tab is the drain and can be bolted directly to a heatsink or chassis. The 290 W maximum power dissipation at case temperature gives headroom for sustained high-current operation when properly heatsunk.
Lifecycle and compliance
The IRFB7734PBF is listed as Active in production status with ROHS3 compliance.