75 V, 183 A N-channel — what this TO-220 carries
The IRFB7734PBF is an N-channel power MOSFET from Infineon's HEXFET® and StrongIRFET™ series, housed in a through-hole TO-220AB package. It is rated for a drain-source voltage of 75 V and a continuous drain current of 183 A at 25 °C case temperature, with a maximum on-resistance of 3.5 mOhm at 100 A and 10 V gate drive. The 175 °C maximum junction temperature allows deployment in high-ambient environments such as motor drives, battery management systems, and industrial DC-DC converters.
The 3.5 mOhm maximum Rds(on) at 100 A and 10 V drives conduction loss in high-current paths.
Temperature range and package
The TO-220AB through-hole package suits designs where board-level thermal dissipation through a heatsink is preferred over surface-mount approaches — the tab is the drain and can be bolted directly to a heatsink or chassis.