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Infineon Technologies IRFB7545PBF

IRFB7545PBF HEXFET N-Ch MOSFET, 60V 95A TO-220

MPNIRFB7545PBF
End of Life

Infineon HEXFET®, StrongIRFET™ IRFB7545PBF N-Channel MOSFET, 60V Vdss, 95A Id, 5.9mOhm Rds(on) at 57A, 10V, TO-220-3 through-hole, -55°C to 175°C junction.

$1.09Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB7545PBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C95A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.7V @ 100µA
Rds on (Max) @ id, vgs5.9mOhm @ 57A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4010 pF @ 25 V

Product details

60 V, 95 A N-channel — what this TO-220 MOSFET delivers

The Infineon IRFB7545PBF is an N-channel MOSFET from the HEXFET and StrongIRFET series, built for high-current switching in a through-hole TO-220-3 package. The 5.9 mOhm on-resistance at 57 A means conduction losses stay low enough that a modest heatsink on the TO-220 tab keeps the junction within the -55°C to 175°C operating range, even in a motor-drive or power-supply rail where the current is continuous.

Gate drive and switching — sizing the driver

The gate charge totals 110 nC at 10 V gate drive, with a recommended drive voltage window of 6 V to 10 V for minimum on-resistance. A gate driver delivering 1 A peak will switch this MOSFET in under 200 ns; a 100 mA logic-level output will be too slow and risk linear-mode heating during the transition. Input capacitance Ciss is 4010 pF at 25 V drain bias — the Miller plateau region is where the driver spends most of its switching energy, so the driver's sink current capability matters more than its source current for turn-off speed.

Through-hole package — field-swappable without a hot-air station

The TO-220-3 through-hole package means a standard soldering iron and solder sucker are all you need to swap this part on site. No hot-air rework station, no preheater — just clear the board, wick the pads, and drop the new device in. The tab is the drain, and the gate is the left pin when the part faces you with the tab to the back. The 125 W power dissipation at case temperature is the thermal design limit — in practice, the junction-to-case thermal resistance and the heatsink's thermal resistance set the real continuous current. A 5°C/W heatsink keeps the junction below 125°C at 95 A with 5.9 mOhm Rds(on).

The 175°C Tj max is the absolute ceiling; continuous operation above 150°C Tj accelerates the bond-wire fatigue rate.

Sourcing — quoted to order, no stock-holding claim

Sourced through independent distribution channels. No official second-source or direct replacement is listed on the Infineon cross-reference; the IPD50R950CEAUMA1 is a 500 V CoolMOS surface-mount part that is not a functional substitute for this 60 V through-hole device.

Frequently asked questions

What is the Rds(on) of the IRFB7545PBF?

Maximum Rds(on) is 5.9 mOhm at 57 A drain current with 10 V gate drive. The recommended drive voltage range for minimum on-resistance is 6 V to 10 V.

Does the IRFB7545PBF have a replacement or equivalent part?

No official replacement or cross-reference is listed for this part. The IPD50R950CEAUMA1 is a 500 V CoolMOS surface-mount device with 950 mOhm Rds(on) — it is not a functional equivalent for this 60 V, 5.9 mOhm through-hole MOSFET.