60 V, 110 A N-channel — TO-220 through-hole power switch
It comes in a TO-220-3 through-hole package, which simplifies heatsink attachment and board-level rework compared to surface-mount alternatives. At lower gate voltages the Rds(on) rises; the datasheet specifies drive voltage for minimum Rds(on) at 10 V, with a usable range down to 6 V.
Gate charge and switching loss budget
Total gate charge Qg is 130 nC at Vgs = 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 13 mA — well within the capability of a standard MOSFET driver IC. The input capacitance Ciss is 4555 pF at Vds = 25 V, which influences the driver's peak current requirement during the Miller plateau. The 160 W maximum power dissipation at case temperature Tc assumes an ideal heatsink. In practice, the junction-to-case thermal path through the TO-220 tab limits continuous power; derate linearly above 25 °C case temperature per the datasheet curve.