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Infineon Technologies IRFB7530PBF

IRFB7530PBF HEXFET N-Ch MOSFET, 60V, 195A, TO-220AB

MPNIRFB7530PBF
End of Life

Infineon IRFB7530PBF, HEXFET® StrongIRFET™ series, N-channel MOSFET, 60 V Vdss, 195 A continuous drain, 2 mOhm Rds(on) at 10 V, 411 nC gate charge, TO-220AB package, -55 to 175 °C junction temperature.

$3.7Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB7530PBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.7V @ 250µA
Rds on (Max) @ id, vgs2mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs411 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds13703 pF @ 25 V

Product details

60 V, 195 A — the high-current workhorse in TO-220

It comes in a through-hole TO-220AB package, which means the tab is the drain and the leads are gate and source — standard pinout for this footprint. Paired with a 411 nC typical gate charge, the driver must supply enough peak current to switch the 13 703 pF input capacitance without excessive crossover loss.

Maximum gate threshold is 3.7 V at 250 µA drain current. The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V, with the 2 mOhm figure specified at 10 V. A 12 V gate drive rail is common; the absolute maximum gate-to-source voltage is ±20 V, so a 12 V rail leaves margin. Junction temperature range is -55 °C to 175 °C — the 175 °C ceiling suits motor-drive and power-conversion stages where the die runs hot under continuous load. The 375 W power dissipation at case temperature is a theoretical maximum; real-world derating depends on the heatsink and airflow.

Frequently asked questions

What are the Rds(on) and gate charge specs for IRFB7530PBF?

Maximum Rds(on) is 2 mOhm at 100 A drain current with 10 V gate drive. Typical gate charge is 411 nC at 10 V. The input capacitance is 13 703 pF at 25 V drain-to-source.

Is IRFB7530PBF RoHS compliant?

Yes, the IRFB7530PBF is ROHS3 compliant.

What is the maximum drain current of IRFB7530PBF?

Continuous drain current is 195 A at 25 °C case temperature. The drain-to-source voltage rating is 60 V.