IRFB7446PBF

Infineon Technologies · HEXFET®, StrongIRFET™ Series

Infineon IRFB7446PBF, HEXFET® StrongIRFET™, N-Channel MOSFET, 40V Vdss, 120A Id, 3.3mOhm Rds(on) @ 70A 10V, 93nC Qg, TO-220AB, -55°C to 175°C.

Infineon Technologies IRFB7446PBF
[IN STOCK] In Stock: 432 pcs
$0.78/ pc

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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFB7446PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation99W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 100µA
Rds on (Max) @ id, vgs3.3mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3183 pF @ 25 V

Technical details

40 V, 120 A N-channel in TO-220AB — what this part is

It is designed for high-current switching applications such as DC-DC converters, motor drives, battery management, and power distribution where low conduction loss and robust avalanche capability matter. The 3.3 mOhm maximum on-resistance at 10 V gate drive keeps I²R losses manageable at 70 A continuous drain current, and the 175 °C maximum junction temperature gives headroom in thermally constrained environments like automotive engine bays or industrial enclosures.

The TO-220AB through-hole package suits point-to-point wiring on perfboard or soldering into a PCB with a heatsink tab. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot in noisy environments.

It is RoHS3 compliant.

IRFB7446PBF
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