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Infineon Technologies IRFB7446PBF
Infineon Technologies

IRFB7446PBF N-Channel MOSFET, 40V 120A TO-220AB, 3.3mOhm

MPNIRFB7446PBF
End of Life

Infineon IRFB7446PBF, HEXFET® StrongIRFET™, N-Channel MOSFET, 40V Vdss, 120A Id, 3.3mOhm Rds(on) @ 70A 10V, 93nC Qg, TO-220AB, -55°C to 175°C.

$1.61Ref. price · indicative, final on quote
IRFB7446PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB7446PBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation99W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 100µA
Rds on (Max) @ id, vgs3.3mOhm @ 70A, 10V
Gate charge (Qg) (Max) @ vgs93 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3183 pF @ 25 V

Product details

40 V, 120 A N-channel in TO-220AB — what this part is

The Infineon IRFB7446PBF is a 40 V, 120 A N-channel power MOSFET from the HEXFET® and StrongIRFET™ series, in a through-hole TO-220AB package. It is designed for high-current switching applications such as DC-DC converters, motor drives, battery management, and power distribution where low conduction loss and robust avalanche capability matter. The 3.3 mOhm maximum on-resistance at 10 V gate drive keeps I²R losses manageable at 70 A continuous drain current, and the 175 °C maximum junction temperature gives headroom in thermally constrained environments like automotive engine bays or industrial enclosures.

Temperature range and mounting

Rated for -55 °C to 175 °C junction temperature, the IRFB7446PBF covers military and industrial extremes. The TO-220AB through-hole package suits point-to-point wiring on perfboard or soldering into a PCB with a heatsink tab. The ±20 V maximum gate-source voltage gives margin for gate-drive overshoot in noisy environments.

Lifecycle and sourcing

It is RoHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRFB7446PBF?

The maximum Rds(on) is 3.3 mOhm at 70 A drain current with a 10 V gate drive. This is the on-resistance figure used for conduction loss calculations.

IRFB7446PBF vs IRFB7440PBF — what's the difference?

Both are 40 V N-channel HEXFETs in TO-220AB, but the IRFB7446PBF carries a lower 3.3 mOhm Rds(on) at 70 A compared to the IRFB7440PBF's higher on-resistance. The 7446 is the lower-loss option for high-current rails where efficiency matters more than cost.