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Infineon Technologies IRFB7434PBF

IRFB7434PBF MOSFET N-CH 40V 195A TO-220AB, 1.6 mOhm Rds(on)

MPNIRFB7434PBF
End of Life

IRFB7434PBF, HEXFET® StrongIRFET™, N-Channel MOSFET, 40V Vdss, 195A Id, 1.6 mOhm Rds(on) at 10V, 324 nC Qg, TO-220AB, -55°C to 175°C.

$3.0Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB7434PBF Technical Specifications
ParameterValue
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation294W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs1.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs324 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10820 pF @ 25 V

Product details

Total gate charge at 10 V is 324 nC. For a switching frequency of 50 kHz, the average gate-drive current is Qg × f = 16.2 mA, but the peak current during the Miller plateau determines the switching speed. A driver capable of 2 A to 4 A peak source/sink is typical to keep switching losses in check. The 10820 pF input capacitance at 25 V drain bias confirms a substantial gate node that demands a low-impedance drive path.

175 °C junction — extended thermal headroom

This gives extra margin in high-ambient environments such as under-hood automotive, server power supplies, and industrial motor drives where the case temperature may approach 100 °C. The 294 W power dissipation at case temperature is the theoretical maximum; real-world dissipation is limited by the heatsink and thermal interface.

Active production — no LTB watch needed

The part is ROHS3 compliant and lead-free. For production BOMs, this reduces the supply-chain risk of a sudden discontinuation.

TO-220AB — the through-hole footprint for high-current routing

Housed in a TO-220-3 (TO-220AB) through-hole package, the IRFB7434PBF suits designs where the PCB copper cannot carry the full drain current on a surface-mount land pattern. The through-hole leads and exposed metal tab allow direct heatsink attachment with a screw or clip. The gate threshold voltage is specified at 3.9 V maximum at 250 µA drain current, ensuring compatibility with 5 V logic and 10 V gate-drive levels.

Frequently asked questions

What is the Rds(on) of IRFB7434PBF?

The maximum Rds(on) is 1.6 mOhm at a drain current of 100 A and a gate-to-source voltage of 10 V.

What is the gate charge of IRFB7434PBF?

The maximum total gate charge is 324 nC at a gate voltage of 10 V.

What package is IRFB7434PBF?

The IRFB7434PBF is supplied in a TO-220-3 through-hole package, also designated TO-220AB.

Is IRFB7434PBF lead-free?

Yes, the IRFB7434PBF is ROHS3 compliant, which restricts lead and other hazardous substances.