IRFB7434PBF

Infineon Technologies · HEXFET®, StrongIRFET™ Series

IRFB7434PBF, HEXFET® StrongIRFET™, N-Channel MOSFET, 40V Vdss, 195A Id, 1.6 mOhm Rds(on) at 10V, 324 nC Qg, TO-220AB, -55°C to 175°C.

Infineon Technologies IRFB7434PBF
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Technical specifications

IRFB7434PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®, StrongIRFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation294W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.9V @ 250µA
Rds on (Max) @ id, vgs1.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs324 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10820 pF @ 25 V

Technical details

A driver capable of 2 A to 4 A peak source/sink is typical to keep switching losses in check.

175 °C junction — extended thermal headroom

This gives extra margin in high-ambient environments such as under-hood automotive, server power supplies, and industrial motor drives where the case temperature may approach 100 °C.

For production BOMs, this reduces the supply-chain risk of a sudden discontinuation.

TO-220AB — the through-hole footprint for high-current routing

Housed in a TO-220-3 (TO-220AB) through-hole package, the IRFB7434PBF suits designs where the PCB copper cannot carry the full drain current on a surface-mount land pattern. The through-hole leads and exposed metal tab allow direct heatsink attachment with a screw or clip. The gate threshold voltage is specified at 3.9 V maximum at 250 µA drain current, ensuring compatibility with 5 V logic and 10 V gate-drive levels.

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