Infineon HEXFET®, StrongIRFET™ IRFB7430PBF, N-Channel MOSFET, 40 V Vdss, 195 A Id, 1.3 mOhm Rds(on) at 10 V, 460 nC Qg, TO-220-3, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.9V @ 250µA |
| Rds on (Max) @ id, vgs | 1.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 460 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14240 pF @ 25 V |
Its 1.3 mOhm typical on-resistance at 100 A and 10 V gate drive makes it a low-conduction-loss switch for high-current DC rails, motor drives, and synchronous rectification stages. The TO-220AB through-hole package suits point-of-load regulators, battery isolation, and inverter legs where board-level heatsinking is practical.
For a BOM freeze, this part presents no last-time-buy risk.
Within the same StrongIRFET family, the IRFB7430 (without the PBF suffix) is the non-RoHS version — same die, same package, same electrical ratings. For a lower gate charge alternative at the same voltage and package class, look at Infineon's OptiMOS 40 V series; the trade-off is typically higher Rds(on) for lower Qg. No direct pin-compatible second source from another manufacturer is listed in the official cross-reference.
The total gate charge is 460 nC at 10 V. This is a high figure that dictates a gate driver capable of sourcing several amps of peak current if you plan to switch above a few tens of kHz. For low-frequency or soft-switched designs, the conduction loss advantage of the 1.3 mOhm Rds(on) outweighs the drive burden.