Infineon Technologies · HEXFET®, StrongIRFET™ Series
Infineon HEXFET®, StrongIRFET™ IRFB7430PBF, N-Channel MOSFET, 40 V Vdss, 195 A Id, 1.3 mOhm Rds(on) at 10 V, 460 nC Qg, TO-220-3, -55 to 175 °C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET®, StrongIRFET™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.9V @ 250µA |
| Rds on (Max) @ id, vgs | 1.3mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 460 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14240 pF @ 25 V |
Its 1.3 mOhm typical on-resistance at 100 A and 10 V gate drive makes it a low-conduction-loss switch for high-current DC rails, motor drives, and synchronous rectification stages. The TO-220AB through-hole package suits point-of-load regulators, battery isolation, and inverter legs where board-level heatsinking is practical.
For a BOM freeze, this part presents no last-time-buy risk.
