IRFB5620PBF

Infineon Technologies

Infineon IRFB5620PBF N-channel MOSFET, 200 V drain-source, 25 A continuous drain, 72.5 mOhm Rds(on) at 10 V gate drive, TO-220AB package, -55°C to 175°C junction temperature.

Infineon Technologies IRFB5620PBF
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Technical specifications

IRFB5620PBF specifications
Parameter / AttributeSpecification / Value
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation144W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs72.5mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1710 pF @ 50 V

Technical details

200 V N-channel MOSFET for 48 V bus and motor-drive rails

The 200 V rating gives a comfortable 2× derating margin on a 48 V bus and headroom on 72 V systems, making it a common choice for motor drives, battery chargers, and DC-DC converters where the TO-220 package allows straightforward heatsinking.

At 25 A continuous drain, the I²R conduction loss reaches roughly 45 W — the 144 W package dissipation rating at case temperature provides headroom, but the heatsink must be sized for the actual duty cycle and ambient.

175 °C junction temperature — thermal margin for industrial environments

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