200 V N-channel MOSFET for 48 V bus and motor-drive rails
The 200 V rating gives a comfortable 2× derating margin on a 48 V bus and headroom on 72 V systems, making it a common choice for motor drives, battery chargers, and DC-DC converters where the TO-220 package allows straightforward heatsinking.
Maximum on-resistance is 72.5 mOhm at 15 A drain current with 10 V gate drive. At 25 A continuous drain, the I²R conduction loss reaches roughly 45 W — the 144 W package dissipation rating at case temperature provides headroom, but the heatsink must be sized for the actual duty cycle and ambient. The 38 nC total gate charge at 10 V keeps gate-drive power modest for hard-switched topologies up to about 100 kHz.
175 °C junction temperature — thermal margin for industrial environments
The -55°C to 175°C junction temperature range exceeds the typical 125 °C industrial limit, giving 50 °C of margin for high-ambient or overload conditions. The 1710 pF input capacitance at 50 V drain-source is moderate — a 1 A gate driver can charge the gate in under 40 ns, though the designer should verify switching losses at the target frequency.