Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFB52N15DPBF, N-Channel MOSFET, 150 V Vdss, 51 A continuous drain, 32 mOhm Rds(on) at 36 A, 10 V, TO-220AB package, -55 to 175 °C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 51A (Tc) |
| Power dissipation | 3.8W (Ta), 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 32mOhm @ 36A, 10V |
| Gate charge (Qg) (Max) @ vgs | 89 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2770 pF @ 25 V |
The IRFB52N15DPBF: Total gate charge is 89 nC at 10 V. Input capacitance is 2770 pF at 25 V drain-source.
The TO-220AB through-hole package dissipates 230 W at the case (Tc) and 3.8 W in still air (Ta). The ±30 V maximum gate-source rating gives margin for gate-drive overshoot.
