IRFB4620PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFB4620PBF, N-Channel MOSFET, 200 Vdss, 25 A continuous drain, 72.5 mOhm Rds(on) at 10 V, 38 nC gate charge, -55°C to 175°C junction, TO-220AB through-hole package.

Infineon Technologies IRFB4620PBF
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Technical specifications

IRFB4620PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C25A (Tc)
Power dissipation144W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs72.5mOhm @ 15A, 10V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1710 pF @ 50 V

Technical details

200 V, 25 A N-channel — the power-stage workhorse

The Infineon IRFB4620PBF is a 200 V, 25 A N-channel HEXFET MOSFET in a TO-220AB through-hole package.

Total gate charge is 38 nC at 10 V, so a 100 kHz switching frequency draws about 3.8 mA average from the gate driver — a standard 1 A driver handles the peak charging current with margin. Input capacitance is 1710 pF at 50 V drain-source. The ±20 V Vgs maximum allows the gate to be driven with a standard 12 V rail without a series clamp.

ROHS3 compliant per the current revision. No official second-source or successor is listed in the Infineon cross-reference database.

IRFB4620PBF
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