200 V, 25 A N-channel — the power-stage workhorse
The Infineon IRFB4620PBF is a 200 V, 25 A N-channel HEXFET MOSFET in a TO-220AB through-hole package.
Gate drive and switching budget
Total gate charge is 38 nC at 10 V, so a 100 kHz switching frequency draws about 3.8 mA average from the gate driver — a standard 1 A driver handles the peak charging current with margin. Input capacitance is 1710 pF at 50 V drain-source. The 10 V drive voltage is required to achieve the rated on-resistance; a 5 V gate drive leaves the FET in the linear region with much higher Rds(on). The ±20 V Vgs maximum allows the gate to be driven with a standard 12 V rail without a series clamp.
Lifecycle and compliance
ROHS3 compliant per the current revision. No official second-source or successor is listed in the Infineon cross-reference database.
