Infineon HEXFET IRFB4615PBF, N-Channel MOSFET, 150 V Vdss, 35 A Id, 39 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55 to 175 °C operating range.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 144W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 39mOhm @ 21A, 10V |
| Gate charge (Qg) (Max) @ vgs | 26 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1750 pF @ 50 V |
The IRFB4615PBF: The 39 mOhm maximum on-resistance at 21 A, 10 V gate drive sets the conduction loss floor.
Total gate charge is 26 nC at 10 V Vgs.
Maximum power dissipation is 144 W at case temperature, derated to zero at 175 °C junction.
Maximum on-resistance is 39 mOhm at 21 A drain current with 10 V gate drive.