Skip to main content
Log in
Infineon Technologies IRFB4510PBF

IRFB4510PBF N-Channel MOSFET, 100V 62A TO-220AB, Active

MPNIRFB4510PBF
End of Life

Infineon HEXFET® IRFB4510PBF, N-Channel MOSFET, 100 Vdss, 62 A continuous drain, 13.5 mOhm Rds(on) at 10 V, 87 nC gate charge, TO-220AB through-hole, -55°C to 175°C junction.

$1.59Ref. price · indicative, final on quote
Infineon Technologies IRFB4510PBF datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFB4510PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C62A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs13.5mOhm @ 37A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3180 pF @ 50 V

Product details

100 V, 62 A — the switching ceiling for this TO-220 N-channel

It comes in a TO-220AB through-hole package, the workhorse for low-to-medium power switching where board-level heatsinking is practical.

This is the efficiency floor for the design: at 37 A, the conduction loss is I²R = 18.5 W, which must be within the 140 W power dissipation limit at the case. The gate threshold is 4 V maximum at 100 µA, so a 10 V gate signal fully enhances the channel and delivers the rated Rds(on).

87 nC gate charge — sizing the gate driver

The input capacitance is 3180 pF at 50 V drain-source, which sets the switching loss during the Miller plateau.

It is ROHS3 compliant. No last-time-buy or successor has been announced.

Frequently asked questions

Can IRFB4510PBF be used in 48V applications?

Yes. With a 100 V drain-source rating, the IRFB4510PBF has 2× margin above a 48 V bus, leaving headroom for transients and ringing typical in 48 V telecom or battery systems.