100 V, 62 A — the switching ceiling for this TO-220 N-channel
It comes in a TO-220AB through-hole package, the workhorse for low-to-medium power switching where board-level heatsinking is practical.
On-resistance is specified at 13.5 mOhm maximum with 37 A drain current and 10 V gate drive. This is the efficiency floor for the design: at 37 A, the conduction loss is I²R = 18.5 W, which must be within the 140 W power dissipation limit at the case. The gate threshold is 4 V maximum at 100 µA, so a 10 V gate signal fully enhances the channel and delivers the rated Rds(on).
87 nC gate charge — sizing the gate driver
Total gate charge at 10 V is 87 nC. For a 100 kHz switching frequency, the average gate-drive current is Qg × f = 8.7 mA. The input capacitance is 3180 pF at 50 V drain-source, which sets the switching loss during the Miller plateau. The ±20 V maximum gate-source rating leaves headroom for ringing on the gate node.
The 140 W power dissipation at case temperature is derated above 25°C per the datasheet curve; a heatsink with adequate thermal resistance is mandatory for continuous operation near the current limit.
Active lifecycle — no end-of-life concern for new designs
It is ROHS3 compliant. No last-time-buy or successor has been announced.