IRFB4510PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFB4510PBF, N-Channel MOSFET, 100 Vdss, 62 A continuous drain, 13.5 mOhm Rds(on) at 10 V, 87 nC gate charge, TO-220AB through-hole, -55°C to 175°C junction.

Infineon Technologies IRFB4510PBF
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[IN STOCK] In Stock: 28 pcs
$1.54/ pc

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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRFB4510PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C62A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 100µA
Rds on (Max) @ id, vgs13.5mOhm @ 37A, 10V
Gate charge (Qg) (Max) @ vgs87 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3180 pF @ 50 V

Technical details

100 V, 62 A — the switching ceiling for this TO-220 N-channel

It comes in a TO-220AB through-hole package, the workhorse for low-to-medium power switching where board-level heatsinking is practical.

This is the efficiency floor for the design: at 37 A, the conduction loss is I²R = 18.5 W, which must be within the 140 W power dissipation limit at the case. The gate threshold is 4 V maximum at 100 µA, so a 10 V gate signal fully enhances the channel and delivers the rated Rds(on).

87 nC gate charge — sizing the gate driver

The input capacitance is 3180 pF at 50 V drain-source, which sets the switching loss during the Miller plateau.

It is ROHS3 compliant. No last-time-buy or successor has been announced.

IRFB4510PBF
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