9 mOhm conduction path for high-current switching
The IRFB4410ZPBF is an N-channel HEXFET power MOSFET from Infineon, rated for a drain-source voltage of 100 V and a continuous drain current of 97 A at 25 °C case temperature.
Gate charge and switching speed budget
Total gate charge is 120 nC at 10 V. Input capacitance (Ciss) is 4820 pF at 50 V drain-source.
Thermal and temperature range
Maximum power dissipation is 230 W at case temperature 25 °C — this is a package-limited number; the real thermal budget depends on the heatsink's thermal resistance and the ambient temperature. The 175 °C maximum junction means the die itself can handle high thermal stress, but the TO-220 tab-to-heatsink interface is the bottleneck in a real assembly.
Active production and sourcing posture
This is a current-production Infineon HEXFET part, ROHS3 compliant.