Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFB4410ZPBF, N-Channel MOSFET, 100 Vdss, 97 A Id, 9 mOhm Rds(on) at 58 A, 10 V, TO-220AB, -55 to 175 °C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 97A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 9mOhm @ 58A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4820 pF @ 50 V |
Total gate charge is 120 nC at 10 V. Input capacitance (Ciss) is 4820 pF at 50 V drain-source.
The 175 °C maximum junction means the die itself can handle high thermal stress, but the TO-220 tab-to-heatsink interface is the bottleneck in a real assembly.
This is a current-production Infineon HEXFET part, ROHS3 compliant.
