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Infineon Technologies IRFB4332PBF

IRFB4332PBF N-Channel MOSFET, 250V 60A TO-220AB

MPNIRFB4332PBF
End of Life

Infineon HEXFET® IRFB4332PBF, N-Channel MOSFET, 250 V Vdss, 60 A Id, 33 mOhm Rds(on) at 35 A, 10 V, TO-220AB, -40°C to 175°C.

$4.17Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB4332PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation390W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5860 pF @ 25 V

Product details

Gate charge and switching speed

Total gate charge is 150 nC at 10 V. At a 100 kHz switching frequency the average gate drive current is 15 mA — a standard gate driver IC handles this without external boost. The 5860 pF input capacitance at 25 V drain-source sets the rise-time budget; the driver must source enough peak current to charge Ciss within the dead-time window.

Thermal headroom and environment

The 390 W maximum power dissipation at case temperature is a package limit — actual dissipation is derated by the RthJC and ambient conditions. The TO-220AB package with through-hole mounting allows direct attachment to a heatsink via the metal tab.

Frequently asked questions

Is IRFB4332PBF obsolete?

No.

Is IRFB4332PBF RoHS compliant?

Yes, the IRFB4332PBF is ROHS3 compliant.