IRFB4332PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFB4332PBF, N-Channel MOSFET, 250 V Vdss, 60 A Id, 33 mOhm Rds(on) at 35 A, 10 V, TO-220AB, -40°C to 175°C.

Infineon Technologies IRFB4332PBF
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[IN STOCK] In Stock: 420 pcs
$2.71/ pc

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Technical specifications

IRFB4332PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C60A (Tc)
Power dissipation390W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs33mOhm @ 35A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5860 pF @ 25 V

Technical details

IRFB4332PBF
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