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Infineon Technologies IRFB4321PBF

IRFB4321PBF HEXFET N-Channel MOSFET, 150 V, 85 A, 15 mOhm

MPNIRFB4321PBF
End of Life

IRFB4321PBF, HEXFET N-Channel MOSFET, 150 Vdss, 85 A continuous, 15 mOhm Rds(on) at 33 A, 10 V, TO-220-3, -55°C to 175°C junction temperature.

$3.2Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFB4321PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C85A (Tc)
Power dissipation350W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 33A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4460 pF @ 50 V

Product details

150 V, 85 A — the conduction-loss ceiling

The IRFB4321PBF is an N-channel HEXFET power MOSFET in a TO-220AB through-hole package. At 33 A and 10 V, the maximum Rds(on) is 15 mOhm, and the package dissipates up to 350 W.

Gate charge is 110 nC at 10 V, with a maximum gate-source voltage of ±30 V. The 110 nC Qg is moderate for a TO-220 N-channel — it dictates the gate-driver peak current and switching loss at frequencies above 50 kHz. Input capacitance is 4460 pF at 50 V drain-source, which sets the drive impedance and rise-time budget.

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRFB4321PBF?

The maximum Rds(on) is 15 mOhm at 33 A drain current with 10 V gate drive. This is the conduction-loss spec used for thermal design.

IRFB4321PBF datasheet specifications?

Key specifications: N-channel HEXFET, 150 Vdss, 85 A continuous drain, 15 mOhm Rds(on) at 33 A and 10 V, 110 nC gate charge, 4460 pF input capacitance, -55°C to 175°C junction temperature, TO-220-3 package.