150 V, 85 A — the conduction-loss ceiling
The IRFB4321PBF is an N-channel HEXFET power MOSFET in a TO-220AB through-hole package. At 33 A and 10 V, the maximum Rds(on) is 15 mOhm, and the package dissipates up to 350 W.
Gate charge is 110 nC at 10 V, with a maximum gate-source voltage of ±30 V. The 110 nC Qg is moderate for a TO-220 N-channel — it dictates the gate-driver peak current and switching loss at frequencies above 50 kHz. Input capacitance is 4460 pF at 50 V drain-source, which sets the drive impedance and rise-time budget.
It is ROHS3 compliant.