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Infineon Technologies IRFB4321PBF
Infineon Technologies

IRFB4321PBF HEXFET N-Channel MOSFET, 150 V, 85 A, 15 mOhm

MPNIRFB4321PBF
End of Life

IRFB4321PBF, HEXFET N-Channel MOSFET, 150 Vdss, 85 A continuous, 15 mOhm Rds(on) at 33 A, 10 V, TO-220-3, -55°C to 175°C junction temperature.

$3.2Ref. price · indicative, final on quote
IRFB4321PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

IRFB4321PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C85A (Tc)
Power dissipation350W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs15mOhm @ 33A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4460 pF @ 50 V

Product details

150 V, 85 A — the conduction-loss ceiling

The IRFB4321PBF is an N-channel HEXFET power MOSFET in a TO-220AB through-hole package. At 33 A and 10 V, the maximum Rds(on) is 15 mOhm, and the package dissipates up to 350 W.

Gate drive and switching budget

Gate charge is 110 nC at 10 V, with a maximum gate-source voltage of ±30 V. The 110 nC Qg is moderate for a TO-220 N-channel — it dictates the gate-driver peak current and switching loss at frequencies above 50 kHz. Input capacitance is 4460 pF at 50 V drain-source, which sets the drive impedance and rise-time budget. The threshold voltage is 5 V max at 250 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. A 10 V gate rail is standard for logic-level gate drivers; a 5 V drive will not fully enhance the channel and will increase conduction loss.

Temperature grade and environment

The junction temperature range is -55°C to 175°C.

Sourcing and compliance

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRFB4321PBF?

The maximum Rds(on) is 15 mOhm at 33 A drain current with 10 V gate drive. This is the conduction-loss spec used for thermal design.

IRFB4321PBF datasheet specifications?

Key specifications: N-channel HEXFET, 150 Vdss, 85 A continuous drain, 15 mOhm Rds(on) at 33 A and 10 V, 110 nC gate charge, 4460 pF input capacitance, -55°C to 175°C junction temperature, TO-220-3 package.