100 V, 120 A N-channel HEXFET in TO-220-3
The TO-220-3 through-hole package allows direct heatsink mounting, making this part a fit for high-current switching in motor drives, DC-DC converters, and battery management systems where the board sees elevated ambient temperatures.
Conduction and switching parametrics
At 75 A and 6 mOhm, I²R dissipation is 33.75 W, which must be sunk through the TO-220 tab to keep junction temperature below the 175 °C absolute maximum. Total gate charge at 10 V is 170 nC, and input capacitance at 50 V drain-source is 6860 pF. The gate charge figure sets the driver current needed for a target switching frequency: at 100 kHz, the average gate-drive current is 17 mA, well within the capability of a standard MOSFET driver IC. The maximum gate threshold voltage is 4 V at 150 µA drain current, and the recommended drive voltage for minimum Rds(on) is 10 V. A 10 V gate rail ensures the device is fully enhanced; driving with 5 V logic may leave the FET in the linear region at high current.
Temperature range and package
Junction temperature range is -55 °C to 175 °C, which qualifies the part for under-hood automotive and industrial enclosure environments where ambient temperatures can exceed 85 °C. The TO-220AB (TO-220-3 variant) package has a standard 0.100-inch pitch and a metal tab for screw or clip heatsink attachment.
Lifecycle and compliance
It is ROHS3 compliant, which means no exemptions for lead in solder or other restricted substances.