100 V, 120 A N-channel HEXFET in TO-220-3
Conduction and switching parametrics
At 75 A and 6 mOhm, I²R dissipation is 33.75 W, which must be sunk through the TO-220 tab to keep junction temperature below the 175 °C absolute maximum. A 10 V gate rail ensures the device is fully enhanced; driving with 5 V logic may leave the FET in the linear region at high current.
Junction temperature range is -55 °C to 175 °C, which qualifies the part for under-hood automotive and industrial enclosure environments where ambient temperatures can exceed 85 °C. The TO-220AB (TO-220-3 variant) package has a standard 0.100-inch pitch and a metal tab for screw or clip heatsink attachment.
It is ROHS3 compliant, which means no exemptions for lead in solder or other restricted substances.