IRFB4310PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFB4310PBF, N-Channel MOSFET, 100 V Vdss, 130 A Id, 7 mOhm Rds(on) at 75 A, 10 V, TO-220-3 through-hole, -55°C to 175°C.

Infineon Technologies IRFB4310PBF
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Technical specifications

IRFB4310PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs250 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7670 pF @ 50 V

Technical details

100 V, 130 A — where the rating limits bite

In a real enclosure at 85°C ambient, derate per the power dissipation ceiling of 300 W at the case; the junction temperature limit of 175°C is the hard stop.

Gate charge and drive budget

Total gate charge is 250 nC at 10 V.

Through-hole package and thermal path

The TO-220-3 (TO-220AB) package is a through-hole mount with a metal tab for heatsink attachment. The 300 W power dissipation rating assumes the tab is bolted to an infinite heatsink — real-world dissipation is limited by the thermal interface and airflow. The -55°C to 175°C junction range covers military-temperature applications; the 4 V threshold at 250 µA is a standard logic-level turn-on, but the drive voltage for minimum Rds(on) is 10 V.

IRFB4310PBF
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