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Infineon Technologies IRFB4310PBF

IRFB4310PBF HEXFET N-Ch MOSFET, 100V 130A TO-220AB

MPNIRFB4310PBF
End of Life

Infineon HEXFET® IRFB4310PBF, N-Channel MOSFET, 100 V Vdss, 130 A Id, 7 mOhm Rds(on) at 75 A, 10 V, TO-220-3 through-hole, -55°C to 175°C.

$3.45Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFB4310PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C130A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs7mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs250 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7670 pF @ 50 V

Product details

100 V, 130 A — where the rating limits bite

In a real enclosure at 85°C ambient, derate per the power dissipation ceiling of 300 W at the case; the junction temperature limit of 175°C is the hard stop.

Gate charge and drive budget

Total gate charge is 250 nC at 10 V. That is a heavy load for a standard gate driver — a 1 A driver switching at 100 kHz needs 25 mA average drive current, but the peak current during the Miller plateau determines the switching time. The 7670 pF input capacitance at 50 V confirms this is a large-die device; plan for a dedicated driver stage, not a logic-output pin.

Through-hole package and thermal path

The TO-220-3 (TO-220AB) package is a through-hole mount with a metal tab for heatsink attachment. The 300 W power dissipation rating assumes the tab is bolted to an infinite heatsink — real-world dissipation is limited by the thermal interface and airflow. The -55°C to 175°C junction range covers military-temperature applications; the 4 V threshold at 250 µA is a standard logic-level turn-on, but the drive voltage for minimum Rds(on) is 10 V.

Lifecycle and compliance

The ±20 V maximum gate-source rating gives margin for gate-drive overshoot in noisy environments.

Frequently asked questions

What is the Rds(on) of IRFB4310PBF?

The maximum Rds(on) is 7 mOhm at 75 A drain current with 10 V gate-to-source drive. This is the on-resistance at the rated drive voltage; actual resistance rises with junction temperature per the normalised curve in the datasheet.

Is IRFB4310PBF RoHS compliant?

Yes, it is ROHS3 compliant. The Pb-free suffix in the order code confirms lead-free construction.

What is the maximum drain current of IRFB4310PBF?

The continuous drain current rating is 130 A at 25°C case temperature. Derate for higher case temperatures per the power dissipation limit of 300 W.