Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRFB4229PBF, N-Channel MOSFET, 250 Vdss, 46 A Id, 46 mOhm Rds(on) at 10 V, 110 nC Qg, TO-220-3, -40 to 175 °C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 250 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 46A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 46mOhm @ 26A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4560 pF @ 25 V |
For a hard-switched converter at 100 kHz, the gate-drive power is roughly Qg × Vgs × fsw = 110 nC × 10 V × 100 kHz = 110 mW, well within a standard gate-driver IC's dissipation budget.
The TO-220-3 (TO-220AB) through-hole package with a metal tab requires a heatsink for any continuous current above a few amps.
ROHS3 compliant. No official second-source or successor is listed in the Infineon cross-reference database for this exact order code.
