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Infineon Technologies IRFB4229PBF

IRFB4229PBF HEXFET N-Channel MOSFET, 250 V, 46 A, TO-220

MPNIRFB4229PBF
End of Life

Infineon HEXFET® IRFB4229PBF, N-Channel MOSFET, 250 Vdss, 46 A Id, 46 mOhm Rds(on) at 10 V, 110 nC Qg, TO-220-3, -40 to 175 °C.

$3.45Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFB4229PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage250 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C46A (Tc)
Power dissipation330W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs46mOhm @ 26A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4560 pF @ 25 V

Product details

Gate charge and switching loss budget

Total gate charge is 110 nC at 10 V gate drive. For a hard-switched converter at 100 kHz, the gate-drive power is roughly Qg × Vgs × fsw = 110 nC × 10 V × 100 kHz = 110 mW, well within a standard gate-driver IC's dissipation budget. The 4560 pF input capacitance at 25 V drain-source gives a rough Ciss figure for driver sizing, but the Qg number is the one to use for switching-loss calculations.

Package and mounting — through-hole TO-220

The TO-220-3 (TO-220AB) through-hole package with a metal tab requires a heatsink for any continuous current above a few amps. The 330 W maximum power dissipation at case temperature assumes an infinite heatsink — real-world dissipation is set by the junction-to-case thermal impedance and the heatsink's thermal resistance.

Lifecycle and compliance

ROHS3 compliant. No official second-source or successor is listed in the Infineon cross-reference database for this exact order code.

Frequently asked questions

Does IRFB4229PBF have a SMD version?

No surface-mount version of this exact die and package combination is listed. The IRFB4229PBF is a through-hole TO-220-3 part only. For a surface-mount 250 V N-channel MOSFET, you would need to look at a different Infineon series such as the DPAK-packaged parts.