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Infineon Technologies IRFB4227PBF
Infineon Technologies

IRFB4227PBF HEXFET N-Channel MOSFET, 200 V, 65 A, TO-220AB

MPNIRFB4227PBF
End of Life

Infineon HEXFET IRFB4227PBF, N-Channel MOSFET, 200 V Vdss, 65 A Id, 24 mOhm Rds(on) at 10 V, 98 nC Qg, TO-220AB, Through Hole, -40°C to 175°C.

$3.25Ref. price · indicative, final on quote
IRFB4227PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB4227PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C65A (Tc)
Power dissipation330W (Tc)
Operating temperature-40°C ~ 175°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 46A, 10V
Gate charge (Qg) (Max) @ vgs98 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4600 pF @ 25 V

Product details

Gate charge and switching — what 98 nC means for your driver

Total gate charge is 98 nC at 10 V, with an input capacitance of 4600 pF at 25 V drain-source. This is a moderate Qg for a 200 V part — a standard gate driver IC can handle it without excessive switching loss, but the designer should budget for the gate drive current at the target frequency. The gate threshold voltage maxes at 5 V at 250 µA, and the recommended drive voltage for minimum Rds(on) is 10 V. A 12 V gate rail is common; stay within the ±30 V Vgs absolute maximum.

Lifecycle and compliance — active, ROHS3, no LTB clock ticking

ROHS3 compliant.

Frequently asked questions

Is the IRFB4227PBF RoHS compliant?

Yes, it is ROHS3 compliant.