Infineon HEXFET IRFB4227PBF, N-Channel MOSFET, 200 V Vdss, 65 A Id, 24 mOhm Rds(on) at 10 V, 98 nC Qg, TO-220AB, Through Hole, -40°C to 175°C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 65A (Tc) |
| Power dissipation | 330W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 24mOhm @ 46A, 10V |
| Gate charge (Qg) (Max) @ vgs | 98 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4600 pF @ 25 V |
This is a moderate Qg for a 200 V part — a standard gate driver IC can handle it without excessive switching loss, but the designer should budget for the gate drive current at the target frequency. A 12 V gate rail is common; stay within the ±30 V Vgs absolute maximum.
ROHS3 compliant.
Yes, it is ROHS3 compliant.