Infineon Technologies · HEXFET® Series
Infineon IRFB4115PBF HEXFET N-Channel MOSFET, 150 Vdss, 104 A continuous drain, 11 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 150 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 104A (Tc) |
| Power dissipation | 380W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 11mOhm @ 62A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5270 pF @ 50 V |
That gate charge number tells you the driver needs to source about 120 nC per switching cycle.
The IRFB4115PBF comes in a TO-220-3 through-hole package, supplier device code TO-220AB. Three leads, mounting hole for a heatsink.
No last-time-buy notice, no NRND flag. The series is the long-running HEXFET family, broadly second-sourced and well-characterised.
