100 V, 120 A N-channel — the HEXFET that handles the heavy bus
The IRFB4110PBF: This is a through-hole TO-220AB part — the three-lead package bolts to a heatsink with the tab as the drain connection.
The 4.5 mOhm Rds(on) at Vgs=10 V is the number to design around for steady-state conduction. At 75 A the dissipation is 25 W in the channel alone — that heat has to flow through the TO-220 tab to a heatsink with a thermal resistance low enough to keep the junction below 175°C. Gate charge is 210 nC at 10 V. Input capacitance is 9620 pF at 50 V drain-source. Maximum gate threshold is 4 V at 250 µA drain current. The gate drive must exceed 10 V to reach rated Rds(on).