150 V N-channel in a TO-220AB — switching and conduction specs
It is built on a standard MOSFET (Metal Oxide) technology and comes in a through-hole TO-220-3 package (supplier device package TO-220AB). The 150 V rating places it in the medium-voltage class — suitable for 48 V to 72 V bus rails, secondary-side synchronous rectification, and DC-DC converters in industrial or telecom supplies where the rail sits below 100 V and the design needs headroom for transients. Maximum on-resistance is 95 mOhm at 10 A gate drive of 10 V, with a gate charge of 20 nC at 10 V. The 800 pF input capacitance at 50 V drain-source keeps the switching node capacitance low enough for moderate-frequency hard-switching without excessive cross-conduction loss.
Temperature range and power dissipation — the thermal budget
Maximum power dissipation is 80 W at the case, which sets the thermal pad and heatsink sizing for continuous operation. The 4.9 V maximum gate threshold at 50 µA drain current means the device is fully enhanced with a standard 10 V gate drive; logic-level drive (5 V) is marginal and the Rds(on) will be higher than the 95 mOhm spec.