IRFB3806PBF, HEXFET® N-Channel MOSFET, 60 V Vdss, 43 A continuous drain, 15.8 mOhm Rds(on) at 10 V, 30 nC gate charge, TO-220-3 through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 43A (Tc) |
| Power dissipation | 71W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 50µA |
| Rds on (Max) @ id, vgs | 15.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 50 V |
The IRFB3806PBF is a 60 V, 43 A N-channel power MOSFET from the HEXFET series, in a through-hole TO-220-3 package (TO-220AB). It carries a 15.8 mOhm maximum on-resistance at 25 A with a 10 V gate drive, and a 30 nC gate charge at 10 V.
It is ROHS3 compliant.
Lead time is confirmed at quote time when you submit an RFQ. The part is Active and generally available through independent distribution.