IRFB3806PBF, HEXFET® N-Channel MOSFET, 60 V Vdss, 43 A continuous drain, 15.8 mOhm Rds(on) at 10 V, 30 nC gate charge, TO-220-3 through-hole, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 43A (Tc) |
| Power dissipation | 71W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 50µA |
| Rds on (Max) @ id, vgs | 15.8mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 30 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1150 pF @ 50 V |
The IRFB3806PBF is a 60 V, 43 A N-channel power MOSFET from the HEXFET series, in a through-hole TO-220-3 package (TO-220AB). It carries a 15.8 mOhm maximum on-resistance at 25 A with a 10 V gate drive, and a 30 nC gate charge at 10 V.
The IRFB3806PBF is listed as Active with no EOL or last-time-buy notice. It is ROHS3 compliant. For a production BOM, this part is a safe choice for new designs — no imminent obsolescence risk.
Lead time is confirmed at quote time when you submit an RFQ. The part is Active and generally available through independent distribution.