Infineon Technologies · HEXFET® Series
IRFB3307ZPBF, HEXFET® Series, N-Channel MOSFET, 75 V Vdss, 120 A Id, 5.8 mOhm Rds(on) at 10 V, TO-220-3 (TO-220AB), Through Hole, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 5.8mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 110 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4750 pF @ 50 V |
The IRFB3307ZPBF: The gate charge is 110 nC at 10 V, and the input capacitance is 4750 pF at 50 V.
The TO-220-3 (TO-220AB) through-hole package is a field-repair favourite — one screw, a soldering iron, no hot-air station.
