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Infineon Technologies IRFB3307ZPBF
Infineon Technologies

IRFB3307ZPBF HEXFET N-Channel MOSFET, 75V 120A TO-220AB

MPNIRFB3307ZPBF
End of Life

IRFB3307ZPBF, HEXFET® Series, N-Channel MOSFET, 75 V Vdss, 120 A Id, 5.8 mOhm Rds(on) at 10 V, TO-220-3 (TO-220AB), Through Hole, -55°C to 175°C.

$2.85Ref. price · indicative, final on quote
IRFB3307ZPBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRFB3307ZPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation230W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs5.8mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs110 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4750 pF @ 50 V

Product details

Gate drive and switching budget

The IRFB3307ZPBF: The gate charge is 110 nC at 10 V, and the input capacitance is 4750 pF at 50 V.

The lifecycle status is Active, and the part is ROHS3 compliant.

Field-swappable in a TO-220AB

The TO-220-3 (TO-220AB) through-hole package is a field-repair favourite — one screw, a soldering iron, no hot-air station. The gate threshold is 4 V max at 150 µA, so a standard 10 V gate drive from a PWM controller or a dedicated driver will turn it on hard. The operating junction range is -55 °C to 175 °C, which covers engine-bay and industrial cabinet environments.

Frequently asked questions

Is IRFB3307ZPBF RoHS compliant?

Yes, it is ROHS3 compliant.