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Infineon Technologies IRFB3207ZPBF

IRFB3207ZPBF N-Channel MOSFET, 75 V, 120 A, 4.1 mOhm Rds(on)

MPNIRFB3207ZPBF
End of Life

Infineon HEXFET IRFB3207ZPBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 4.1 mOhm Rds(on) at 75 A, 10 V, 170 nC Qg, TO-220AB, -55°C to 175°C.

$2.93Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFB3207ZPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs4.1mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6920 pF @ 50 V

Product details

Gate charge and switching speed — 170 nC at 10 V

Total gate charge Qg is 170 nC at Vgs = 10 V. For a switching frequency of 100 kHz, the average gate-drive current needed is 17 mA — well within the capability of a standard totem-pole driver, but the peak current during the Miller plateau demands a driver with at least 2 A peak output to keep the switching transition under 100 ns. The input capacitance Ciss is 6920 pF at Vds = 50 V, which sets the driver's source/sink resistance requirement for clean edges without ringing.

Temperature range and package — TO-220AB with 175°C junction

Operating junction temperature spans -55°C to 175°C, which qualifies the part for military-temperature-range environments — avionics, downhole drilling, and engine-bay electronics where the ambient can exceed 125°C. The TO-220AB through-hole package (TO-220-3) allows heatsink mounting with a screw or clip; the 300 W power dissipation rating at the case is achievable only with adequate heatsinking and forced airflow. The maximum Rds(on) is specified at 10 V gate drive, so a 12 V gate supply is the practical choice to stay above the threshold with margin.

Lifecycle and sourcing

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of the IRFB3207ZPBF at 75 A and 10 V?

The maximum Rds(on) is 4.1 mOhm at Id = 75 A and Vgs = 10 V. This is the figure to use for worst-case conduction loss in your thermal model.

What is the gate charge (Qg) of the IRFB3207ZPBF?

This sets the gate-driver current requirement for your switching frequency — for example, 100 kHz switching needs 17 mA average drive current.