Infineon Technologies · HEXFET® Series
Infineon HEXFET IRFB3207ZPBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 4.1 mOhm Rds(on) at 75 A, 10 V, 170 nC Qg, TO-220AB, -55°C to 175°C.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 75 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 150µA |
| Rds on (Max) @ id, vgs | 4.1mOhm @ 75A, 10V |
| Gate charge (Qg) (Max) @ vgs | 170 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6920 pF @ 50 V |
Total gate charge Qg is 170 nC at Vgs = 10 V. The input capacitance Ciss is 6920 pF at Vds = 50 V, which sets the driver's source/sink resistance requirement for clean edges without ringing.
The TO-220AB through-hole package (TO-220-3) allows heatsink mounting with a screw or clip; the 300 W power dissipation rating at the case is achievable only with adequate heatsinking and forced airflow.
It is ROHS3 compliant.
