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Infineon Technologies IRFB3206PBF

IRFB3206PBF HEXFET N-Ch MOSFET, 60 V, 120 A, 3 mOhm

MPNIRFB3206PBF
End of Life

Infineon IRFB3206PBF HEXFET N-Channel MOSFET, 60 V Vdss, 120 A continuous drain, 3 mOhm Rds(on) max at 75 A, 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$2.24Ref. price · indicative, final on quote
Infineon Technologies IRFB3206PBF datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRFB3206PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 150µA
Rds on (Max) @ id, vgs3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs170 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds6540 pF @ 50 V

Product details

60 V, 120 A N-channel HEXFET in TO-220

The IRFB3206PBF: It comes in a TO-220-3 through-hole package, the standard footprint for medium-power through-hole designs — motor drives, DC-DC converters, battery protection, and synchronous rectification stages.

3 mOhm Rds(on) — what it means for conduction loss

At 75 A the conduction loss is I²R = 16.9 W — that is the floor the heatsink must pull away.

Total gate charge is 170 nC at 10 V. Input capacitance Ciss is 6540 pF at 50 V Vds, which sets the driver's turn-on delay.

Junction temperature range is -55°C to 175°C — a full military-temperature-span rating that suits avionics, down-hole tools, and under-hood automotive environments where ambient can exceed 125°C. The TO-220AB package (TO-220-3 variant) has a metal tab that carries the drain; the tab must be electrically isolated or tied to the drain rail. Maximum power dissipation is 300 W at case temperature — that figure assumes an infinite heatsink; real-world derating follows the thermal resistance junction-to-case.

Frequently asked questions

What is the Rds(on) of IRFB3206PBF?

Maximum Rds(on) is 3 mOhm at 75 A drain current with 10 V gate drive.

What are the specifications of IRFB3206PBF?

N-channel HEXFET MOSFET, 60 V Vdss, 120 A continuous drain at 25°C, 3 mOhm Rds(on) max at 75 A and 10 V, 170 nC gate charge, 6540 pF input capacitance, -55°C to 175°C junction range, TO-220-3 through-hole package.