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Infineon Technologies IRFB3077PBF
Infineon Technologies

IRFB3077PBF HEXFET N-Ch MOSFET, 75V 120A TO-220AB

MPNIRFB3077PBF
End of Life

Infineon HEXFET IRFB3077PBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 3.3 mOhm Rds(on) max @ 75 A / 10 V, 220 nC Qg, TO-220AB, -55°C to 175°C.

$5.21Ref. price · indicative, final on quote
IRFB3077PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFB3077PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation370W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9400 pF @ 50 V

Product details

Gate charge and switching speed

Total gate charge is 220 nC at 10 V, with an input capacitance of 9400 pF at 50 V drain-source. That Qg number tells the gate-driver designer the energy per switching cycle — at 20 kHz switching, the average gate current is 4.4 mA, easily handled by a standard driver, but the peak current during the Miller plateau determines the rise time and the cross-conduction window.

Through-hole TO-220AB — thermal and mechanical fit

The TO-220AB package with through-hole mounting suits designs where the PCB is the primary heatsink or where a clip-on heatsink is acceptable.

Frequently asked questions

What is the Rds(on) of IRFB3077PBF?

The maximum on-resistance is 3.3 mOhm at 75 A drain current with 10 V gate drive. This is the worst-case value at 25°C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet.

What is the gate charge of IRFB3077PBF?

Total gate charge is 220 nC at 10 V gate voltage. This value determines the gate-driver current requirement and switching losses at the target frequency.

Can IRFB3077PBF be used for motor control?

Yes — the 75 V drain-source rating and 120 A continuous current capability, combined with the 3.3 mOhm Rds(on), make it suitable for DC brush and brushless motor drives up to 48 V nominal bus voltage, provided the switching frequency and gate-drive design account for the 220 nC gate charge.