IRFB3077PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRFB3077PBF, N-Channel MOSFET, 75 V Vdss, 120 A Id, 3.3 mOhm Rds(on) max @ 75 A / 10 V, 220 nC Qg, TO-220AB, -55°C to 175°C.

Infineon Technologies IRFB3077PBF
[IN STOCK] In Stock: 4,647 pcs
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Technical specifications

IRFB3077PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage75 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation370W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs3.3mOhm @ 75A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9400 pF @ 50 V

Technical details

Total gate charge is 220 nC at 10 V, with an input capacitance of 9400 pF at 50 V drain-source. That Qg number tells the gate-driver designer the energy per switching cycle — at 20 kHz switching, the average gate current is 4.4 mA, easily handled by a standard driver, but the peak current during the Miller plateau determines the rise time and the cross-conduction window.

Through-hole TO-220AB — thermal and mechanical fit

The TO-220AB package with through-hole mounting suits designs where the PCB is the primary heatsink or where a clip-on heatsink is acceptable.

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