Infineon HEXFET IRFB3006PBF, N-Channel MOSFET, 60 V Vdss, 195 A Id, 2.5 mOhm Rds(on) at 10 V, 300 nC Qg, TO-220AB through-hole, -55°C to 175°C junction.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 195A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 2.5mOhm @ 170A, 10V |
| Gate charge (Qg) (Max) @ vgs | 300 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8970 pF @ 50 V |
The IRFB3006PBF: Gate charge is 300 nC at 10 V. Input capacitance is 8970 pF at 50 V drain-source.
The TO-220AB package with a metal tab lets the designer bolt the device to a heatsink or chassis — the 375 W dissipation rating assumes a case temperature held at 25°C, so real-world derating depends on the thermal interface and airflow.
Design engineers need this to verify power loss and thermal performance in switching circuits.
Buyers need real-time stock to fulfill BOM requirements without delaying production.
Sourcing buyers compare prices across distributors to minimize cost per unit.
Both techs and buyers need alternatives during shortages or for design changes.
Gate charge determines switching speed and gate drive requirements; critical for high-frequency designs.
Brokers and buyers need lifecycle status to avoid supply chain disruptions.