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Infineon Technologies IRFB3004PBF
Infineon Technologies

IRFB3004PBF HEXFET N-Channel MOSFET, 40V 195A TO-220AB

MPNIRFB3004PBF
End of Life

Infineon HEXFET® IRFB3004PBF, N-Channel MOSFET, 40 V Vdss, 195 A continuous drain, 1.75 mOhm Rds(on) at 10 V, TO-220AB through-hole, -55°C to 175°C junction temperature.

$4.51Ref. price · indicative, final on quote
IRFB3004PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRFB3004PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation380W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs1.75mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs240 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds9200 pF @ 25 V

Product details

Gate charge and switching budget

Total gate charge is 240 nC at 10 V, with an input capacitance of 9200 pF at 25 V drain-source. A 240 nC gate charge means the gate driver must source about 2.4 A peak to switch the FET in 100 ns — budget a driver with at least 2 A peak current capability if you are switching above 20 kHz.

Thermal design: 380 W dissipation in a TO-220AB

Maximum power dissipation is 380 W at case temperature, but the TO-220AB package's thermal resistance to ambient is around 62°C/W without a heatsink.

Frequently asked questions

Can the IRFB3004PBF handle 100 A continuous?

Yes — the continuous drain current is rated at 195 A at 25°C case temperature. At 100 A the conduction loss is roughly 17.5 W (I² × Rds(on)), which is well within the 380 W maximum dissipation, provided the case temperature is kept within limits through adequate heatsinking.