IRFB260NPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRFB260NPBF, N-Channel MOSFET, 200 V Vdss, 56 A Id, 40 mOhm Rds(on) at 10 V, TO-220AB through-hole, -55 to 175 °C junction temperature.

Infineon Technologies IRFB260NPBF
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Technical specifications

IRFB260NPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C56A (Tc)
Power dissipation380W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 34A, 10V
Gate charge (Qg) (Max) @ vgs220 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4220 pF @ 25 V

Technical details

200 V, 56 A N-channel HEXFET® in a TO-220AB

The 40 mOhm maximum on-resistance at 34 A and 10 V gate drive keeps conduction losses manageable in motor drives, inverters, and DC-DC converters. The junction temperature range of -55 to 175 °C suits industrial and automotive under-hood environments where thermal cycling is severe.

Gate charge and drive compatibility

Gate charge is 220 nC at 10 V. Input capacitance is 4220 pF at 25 V.

Thermal and power handling

The device is rated for 380 W power dissipation at the case (Tc), so a properly sized heatsink is mandatory for any continuous load above a few amps. The 56 A continuous drain current is specified at 25 °C case temperature — derate significantly at elevated case temperatures. The TO-220AB tab is electrically connected to the drain; an insulating pad and thermal compound are needed if the heatsink is grounded.

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