200 V, 56 A N-channel HEXFET® in a TO-220AB
The Infineon IRFB260NPBF is a 200 V, 56 A N-channel power MOSFET from the HEXFET® series, built on planar stripe technology. It comes in a through-hole TO-220AB package with a metal tab for direct heatsink mounting. The 40 mOhm maximum on-resistance at 34 A and 10 V gate drive keeps conduction losses manageable in motor drives, inverters, and DC-DC converters. The junction temperature range of -55 to 175 °C suits industrial and automotive under-hood environments where thermal cycling is severe.
Gate charge and drive compatibility
Gate charge is 220 nC at 10 V. Input capacitance is 4220 pF at 25 V.
Thermal and power handling
The device is rated for 380 W power dissipation at the case (Tc), so a properly sized heatsink is mandatory for any continuous load above a few amps. The 56 A continuous drain current is specified at 25 °C case temperature — derate significantly at elevated case temperatures. The TO-220AB tab is electrically connected to the drain; an insulating pad and thermal compound are needed if the heatsink is grounded.
Lifecycle and compliance
No end-of-life notice or last-time-buy window is in effect, so it can be specified into new designs without near-term obsolescence risk.