High-voltage hermetic N-channel MOSFET
The IRFAG20 is an N-channel hermetic MOS HEXFET designed for high-voltage switching applications. The hermetic package makes it suitable for environments where moisture and contamination resistance are required, such as military, aerospace, or industrial power supplies.
The 1000 V drain-source voltage rating suits offline flyback converters, PFC stages, or high-voltage DC-DC converters. The 1.3 A continuous drain current fits auxiliary or low-power high-voltage rails. The 50 W power dissipation rating is the thermal budget for the device in a through-hole hermetic package. The hermetic construction (HEXFET) provides a sealed die cavity, which is a different reliability profile than plastic-encapsulated MOSFETs — it resists moisture ingress and is often specified in high-reliability programs.