High-voltage hermetic N-channel MOSFET
The IRFAG20 is an N-channel hermetic MOS HEXFET designed for high-voltage switching applications. It is rated for a drain-source voltage of 1000 V and a continuous drain current of 1.3 A, with a power dissipation of 50 W. The hermetic package makes it suitable for environments where moisture and contamination resistance are required, such as military, aerospace, or industrial power supplies.
The 1000 V drain-source voltage rating suits offline flyback converters, PFC stages, or high-voltage DC-DC converters. The 1.3 A continuous drain current fits auxiliary or low-power high-voltage rails. The 50 W power dissipation rating is the thermal budget for the device in a through-hole hermetic package. In a 25 °C ambient, a heatsink sized to keep the junction below 150 °C at 50 W dissipation is needed. The hermetic construction (HEXFET) provides a sealed die cavity, which is a different reliability profile than plastic-encapsulated MOSFETs — it resists moisture ingress and is often specified in high-reliability programs.