Hermetic N-channel HEXFET rated for 900 V bus work
The IRFAF20 is an N-channel hermetic HEXFET MOSFET from the IR product line, built for high-voltage switching in demanding environments. It is rated for a drain-source voltage of 900 V and a continuous drain current of 1.6 A, with a power dissipation limit of 50 W. The hermetic package and through-hole mounting suit applications where reliability under thermal or mechanical stress is critical — military power supplies, avionics converters, or high-voltage industrial inverters where potting or conformal coating is standard.
900 V rating — what it means for the bus
The 900 V drain-source breakdown voltage gives this MOSFET headroom on a nominal bus. The 1.6 A continuous current rating, paired with the 50 W dissipation limit, means it can handle moderate loads without oversized heatsinking, provided the switching frequency stays low enough to keep conduction losses dominant. The through-hole package allows bolt-down to a chassis or cold plate for thermal management.
Lifecycle and sourcing
No end-of-life notice or last-time-buy window is in effect. For BOM planning, this part can be qualified into a new design without near-term obsolescence risk.