600 V N-channel HEXFET — hermetic, through-hole
It is designed for high-reliability applications where sealed-device construction is required — avionics, satellite power systems, downhole instrumentation, and military-grade power converters. The 2.5 Ohm maximum on-resistance at 3.6 A, 10 V gate drive sets the conduction loss baseline for the BOM.
At 2.5 Ohm max with 10 V gate drive, this part is a standard-threshold MOSFET. The 4 V threshold at 250 µA is typical for the family.
Temperature range and package — application fit
The hermetic construction (the description notes N-CHANNEL HERMETIC MOS HEXFET) means the die is sealed against moisture and contamination — a requirement for long-life mission equipment and sealed enclosures where conformal coating alone is insufficient. The through-hole mounting suits point-to-point wiring, terminal blocks, or high-vibration chassis mounting where a solder joint alone is not the primary mechanical retention.