600 V N-channel HEXFET — hermetic, through-hole
The IRFAC30 is a 600 V, 3.6 A N-channel power MOSFET from the HEXFET series, built in a hermetic through-hole package. It is designed for high-reliability applications where sealed-device construction is required — avionics, satellite power systems, downhole instrumentation, and military-grade power converters. The 2.5 Ohm maximum on-resistance at 3.6 A, 10 V gate drive sets the conduction loss baseline for the BOM.
Rds(on) and gate drive — what they mean for the design
At 2.5 Ohm max with 10 V gate drive, this part is a standard-threshold MOSFET. The 4 V threshold at 250 µA is typical for the family. The 38 nC total gate charge at 10 V is moderate.
Temperature range and package — application fit
Rated for a junction temperature range of -55°C to 150°C, the IRFAC30 covers military and industrial thermal environments. The hermetic construction (the description notes N-CHANNEL HERMETIC MOS HEXFET) means the die is sealed against moisture and contamination — a requirement for long-life mission equipment and sealed enclosures where conformal coating alone is insufficient. The through-hole mounting suits point-to-point wiring, terminal blocks, or high-vibration chassis mounting where a solder joint alone is not the primary mechanical retention.