P-Channel HEXFET in D2PAK — 55 V, 19 A, 100 mOhm
The Infineon IRF9Z34NSTRLPBF is a P-Channel enhancement-mode MOSFET from the HEXFET series, housed in a surface-mount D2PAK (TO-263) package. It is rated for a drain-to-source voltage of 55 V and a continuous drain current of 19 A at 25°C case temperature. The maximum on-resistance is 100 mOhm at a 10 A drain current with a 10 V gate drive. This part is suited for load switching, power management, and DC-DC converter applications where a P-Channel device simplifies high-side drive circuitry.
Ratings that drive the BOM decision
The junction temperature range spans -55°C to 175°C, covering military and industrial temperature extremes. This makes the part usable in outdoor telecom, engine bay electronics, and other high-temperature environments where commercial-grade parts would derate or fail.
Package and mounting
The D2PAK (TO-263) surface-mount package has a large metal tab for heat transfer to the PCB copper plane. The tab is the drain connection. The two-lead plus tab configuration requires a PCB footprint with adequate copper area for thermal dissipation. The part is supplied on Tape & Reel, compatible with automated pick-and-place assembly.
Lifecycle and sourcing
The IRF9Z34NSTRLPBF is listed as Active with ROHS3 compliance. No end-of-life notice or last-time-buy is indicated. For production BOMs, this part is available to order through independent distribution. No direct pin-compatible second source is listed in the available records, so dual-sourcing would require qualification of an alternative P-Channel MOSFET with similar Rds(on) and gate charge.