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Infineon Technologies IRF9Z34NPBF
Infineon Technologies

IRF9Z34NPBF P-Channel MOSFET, 55V 19A TO-220AB

MPNIRF9Z34NPBF
End of Life

Infineon HEXFET IRF9Z34NPBF, P-Channel MOSFET, 55V Vdss, 19A Id, 100mOhm Rds(on) @ 10V, TO-220AB, -55°C to 175°C.

$1.06Ref. price · indicative, final on quote
IRF9Z34NPBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF9Z34NPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeThrough Hole
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds620 pF @ 25 V

Product details

P-channel high-side switch for 12–48 V rails

The Infineon IRF9Z34NPBF is a P-channel HEXFET MOSFET in a TO-220AB through-hole package, rated for 55 V drain-source breakdown and 19 A continuous drain current at 25°C case temperature. P-channel polarity means it can switch the positive rail directly without a dedicated gate-drive boost circuit — useful in battery protection, load disconnect, and reverse-polarity blocking where the load returns to ground. The 100 mOhm maximum on-resistance at 10 V gate drive and 10 A load sets conduction loss at roughly 10 W at full current; that figure drives the heatsink choice and board layout for the 68 W package limit.

Gate drive and switching characteristics

Gate threshold voltage maximum is 4 V at 250 µA drain current. The datasheet specifies 10 V gate drive to achieve the rated Rds(on).

Lifecycle and sourcing

The IRF9Z34NPBF carries an Active product status and ROHS3 compliance. It is a current-production part from Infineon's HEXFET series, so no last-time-buy or end-of-life risk for new designs.

Frequently asked questions

What is the Rds(on) of IRF9Z34NPBF?

Maximum on-resistance is 100 mOhm at 10 A drain current with 10 V gate-to-source drive. This is the figure used for conduction-loss calculations in a high-side switch or load-disconnect application.

What is the maximum drain current of IRF9Z34NPBF?

Continuous drain current is 19 A at 25°C case temperature. This rating assumes the case is held at 25°C; derate for higher ambient temperature.