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Infineon Technologies IRF9952TRPBF
Infineon Technologies

IRF9952TRPBF Dual N/P-Channel MOSFET, 30 V, 3.5 A/2.3 A

MPNIRF9952TRPBF
End of Life

IRF9952TRPBF HEXFET® series, dual N- and P-channel logic-level MOSFET, 30 V drain-to-source voltage, 3.5 A (N-ch) / 2.3 A (P-ch) continuous drain current, 100 mOhm max on-resistance at 2.2 A, surface-mount 8-SOIC package, -55°C to 150°C operating temperature.

$0.82Ref. price · indicative, final on quote
IRF9952TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF9952TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN and P-Channel
Mounting typeSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C3.5A, 2.3A
Power - max2W
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureLogic Level Gate
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs14nC @ 10V
Input capacitance (Ciss) (Max) @ vds190pF @ 15V

Product details

100 mOhm on-resistance — conduction loss floor for 12 V bus rails

Maximum Rds(on) is 100 mOhm at 2.2 A drain current and 10 V gate drive, which sets the conduction loss at roughly 0.48 W at the rated current — within the 2 W package power limit when the PCB copper area provides adequate heat sinking. Gate charge is 14 nC at 10 V, and input capacitance is 190 pF at 15 V Vds — low enough that a simple logic-level gate driver or even a GPIO pin with a series resistor can switch the FET at moderate frequencies without excessive drive current.

Frequently asked questions

What is the closest pin-compatible alternative to IRF9952TRPBF?

No official pin-compatible second source or replacement is listed on the manufacturer's cross-reference for this part. For dual N/P-channel MOSFETs in SO-8, parametric equivalents from other vendors exist but footprint and pinout must be verified against the target PCB layout.