Infineon Technologies · HEXFET® Series
IRF9952TRPBF HEXFET® series, dual N- and P-channel logic-level MOSFET, 30 V drain-to-source voltage, 3.5 A (N-ch) / 2.3 A (P-ch) continuous drain current, 100 mOhm max on-resistance at 2.2 A, surface-mount 8-SOIC package, -55°C to 150°C operating temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 3.5A, 2.3A |
| Power - max | 2W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Logic Level Gate |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 1V @ 250µA |
| Rds on (Max) @ id, vgs | 100mOhm @ 2.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14nC @ 10V |
| Input capacitance (Ciss) (Max) @ vds | 190pF @ 15V |
Maximum Rds(on) is 100 mOhm at 2.2 A drain current and 10 V gate drive, which sets the conduction loss at roughly 0.48 W at the rated current — within the 2 W package power limit when the PCB copper area provides adequate heat sinking.
