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Infineon Technologies IRF9393TRPBF

IRF9393TRPBF P-Channel MOSFET, 30 V, 9.2 A, 13.3 mOhm

MPNIRF9393TRPBF
End of Life

Infineon HEXFET® IRF9393TRPBF, P-Channel MOSFET, 30 V Vdss, 9.2 A Id, 13.3 mOhm Rds(on) at 20 Vgs, 8-SOIC surface mount, -55°C to 150°C junction temperature.

$0.73Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF9393TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V, 20V
Current - continuous drain (Id) @ 25°C9.2A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.4V @ 25µA
Rds on (Max) @ id, vgs13.3mOhm @ 9.2A, 20V
Gate charge (Qg) (Max) @ vgs38 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1110 pF @ 25 V

Product details

P-Channel load switch for 30 V rails

The Infineon IRF9393TRPBF is a HEXFET P-Channel MOSFET rated for 30 V drain-to-source and 9.2 A continuous drain current at 25°C. On-resistance is 13.3 mOhm maximum with a 20 V gate drive.

Gate drive and switching considerations

Gate charge is 38 nC at 10 V.

Lifecycle and sourcing

It is ROHS3 compliant. For BOM planning, this part is available through independent distribution and is sourced to order against an RFQ. Current pricing and lead time are confirmed at quote time; no allocation risk is flagged at this time.

Frequently asked questions

What are the electrical specifications of IRF9393TRPBF?

It is a P-Channel MOSFET with 30 V drain-to-source voltage, 9.2 A continuous drain current at 25°C, 13.3 mOhm maximum on-resistance at 20 V gate drive, and a -55°C to 150°C junction temperature range.

Is IRF9393TRPBF compatible with 3.3 V logic gate drive?

The gate threshold voltage is 2.4 V maximum at 25 µA, so a 3.3 V logic output can turn the MOSFET on, but Rds(on) will be higher than the rated 13.3 mOhm (specified at 10 V and 20 V drive). For full conduction, a gate driver that provides at least 10 V is recommended.