Infineon HEXFET® IRF9393TRPBF, P-Channel MOSFET, 30 V Vdss, 9.2 A Id, 13.3 mOhm Rds(on) at 20 Vgs, 8-SOIC surface mount, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V, 20V |
| Current - continuous drain (Id) @ 25°C | 9.2A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.4V @ 25µA |
| Rds on (Max) @ id, vgs | 13.3mOhm @ 9.2A, 20V |
| Gate charge (Qg) (Max) @ vgs | 38 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1110 pF @ 25 V |
The Infineon IRF9393TRPBF is a HEXFET P-Channel MOSFET rated for 30 V drain-to-source and 9.2 A continuous drain current at 25°C. On-resistance is 13.3 mOhm maximum with a 20 V gate drive.
Gate charge is 38 nC at 10 V.
It is ROHS3 compliant.
It is a P-Channel MOSFET with 30 V drain-to-source voltage, 9.2 A continuous drain current at 25°C, 13.3 mOhm maximum on-resistance at 20 V gate drive, and a -55°C to 150°C junction temperature range.
The gate threshold voltage is 2.4 V maximum at 25 µA, so a 3.3 V logic output can turn the MOSFET on, but Rds(on) will be higher than the rated 13.3 mOhm (specified at 10 V and 20 V drive). For full conduction, a gate driver that provides at least 10 V is recommended.