Complementary N/P-channel pair in one SOIC-8
The IRF9389TRPBF from the HEXFET series is a complementary N- and P-channel MOSFET in a single 8-SOIC package. It integrates a 30V N-channel rated at 6.8A continuous drain current and a 30V P-channel rated at 4.6A, both with logic-level gate thresholds — the N-channel turns on fully at 10V gate drive with a typical Rds(on) of 27 mOhm at 6.8A. This configuration is purpose-built for half-bridge and inverter legs in DC-DC converters, motor drives, and synchronous rectifiers where the N-channel handles the high-side switch and the P-channel the low-side, or vice versa, without needing separate packages for each polarity.
Gate charge and switching speed
Total gate charge at 10V is 14 nC, a low figure that lets a 5V logic output drive the gate directly through a series resistor — no dedicated gate driver IC needed for switching frequencies up to a few hundred kHz. The input capacitance Ciss is 398 pF at 15V drain-source, which sets the switching loss floor in hard-switched topologies. The logic-level gate threshold (Vgs(th) max 2.3V at 10 µA) ensures the FET is fully enhanced with a standard 5V gate drive, and the 2W maximum power dissipation in the SOIC-8 package limits continuous duty — the part is designed for switching, not linear operation.