Infineon HEXFET IRF9388TRPBF, P-Channel MOSFET, 30 V Vdss, 12 A continuous drain, 8.5 mOhm Rds(on) at 20 V, 52 nC gate charge, -55°C to 150°C junction, 8-SOIC package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 10V, 20V |
| Current - continuous drain (Id) @ 25°C | 12A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.4V @ 25µA |
| Rds on (Max) @ id, vgs | 8.5mOhm @ 12A, 20V |
| Gate charge (Qg) (Max) @ vgs | 52 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1680 pF @ 25 V |
The 8.5 mOhm maximum on-resistance at 20 V gate drive keeps conduction loss low in high-side switching, battery-ORing, and load-switch applications where a P-channel simplifies the gate drive because the source is tied to the supply rail.
At 12 A the 8.5 mOhm channel resistance produces about 1.2 W of conduction loss (I²R), which sits within the 2.5 W package power dissipation limit at 25°C ambient.
The specified drive voltage for achieving the rated Rds(on) is 10 V or 20 V. At 3.3 V gate drive the on-resistance will be significantly higher than the 8.5 mOhm maximum — the gate threshold voltage is 2.4 V maximum at 25 µA, so the device will turn on, but conduction losses will increase. For a 3.3 V gate signal, consider a P-channel MOSFET with a lower gate threshold or a level-shift gate driver.