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Infineon Technologies IRF9388TRPBF
Infineon Technologies

IRF9388TRPBF P-Channel MOSFET, 30 V, 12 A, 8.5 mOhm

MPNIRF9388TRPBF
End of Life

Infineon HEXFET IRF9388TRPBF, P-Channel MOSFET, 30 V Vdss, 12 A continuous drain, 8.5 mOhm Rds(on) at 20 V, 52 nC gate charge, -55°C to 150°C junction, 8-SOIC package.

$0.85Ref. price · indicative, final on quote
IRF9388TRPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRF9388TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)10V, 20V
Current - continuous drain (Id) @ 25°C12A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.4V @ 25µA
Rds on (Max) @ id, vgs8.5mOhm @ 12A, 20V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1680 pF @ 25 V

Product details

P-channel load switch in an SO-8

The 8.5 mOhm maximum on-resistance at 20 V gate drive keeps conduction loss low in high-side switching, battery-ORing, and load-switch applications where a P-channel simplifies the gate drive because the source is tied to the supply rail.

At 12 A the 8.5 mOhm channel resistance produces about 1.2 W of conduction loss (I²R), which sits within the 2.5 W package power dissipation limit at 25°C ambient. The 52 nC total gate charge at 10 V means a standard gate driver can switch it in the tens of kilohertz range without excessive drive current; a 1 A gate driver charges the gate in about 50 ns.

Temperature range and operating environment

The 1680 pF input capacitance at 25 V Vds is moderate — the driver sees a manageable capacitive load at switch-on.

Frequently asked questions

Can IRF9388TRPBF be driven by 3.3V logic?

The specified drive voltage for achieving the rated Rds(on) is 10 V or 20 V. At 3.3 V gate drive the on-resistance will be significantly higher than the 8.5 mOhm maximum — the gate threshold voltage is 2.4 V maximum at 25 µA, so the device will turn on, but conduction losses will increase. For a 3.3 V gate signal, consider a P-channel MOSFET with a lower gate threshold or a level-shift gate driver.