Dual P-Channel MOSFET in a compact 8-SOIC
The IRF9362TRPBF is a dual P-Channel MOSFET from the HEXFET® series, integrating two independent 30V, 8A rated transistors in an 8-SOIC package.
21mOhm on-resistance — what it means for your power path
Maximum Rds(on) is 21mOhm at 8A and 10V Vgs. The 2W package power limit means both channels cannot run at 8A simultaneously without exceeding the thermal budget.
Gate charge and switching considerations
Gate charge is 39nC at 10V and input capacitance is 1300pF at 25V Vds. In low-frequency load-switch applications, the gate charge is not a constraint.
Temperature range and environment
Junction temperature range is -55°C to 150°C. The 8-SOIC package is a standard surface-mount footprint compatible with reflow soldering.
Sourcing and lifecycle
The IRF9362TRPBF is listed as Active and ROHS3 Compliant. It is a current-production part, available through independent distribution. Pricing and availability are confirmed at quote time against an RFQ — no stock or price figures are published here. Cut Tape (CT) options may also be available for prototype quantities.