Dual P-channel in an SO-8 — load-switching workhorse
The IRF9358TRPBF is a dual P-channel MOSFET from Infineon's HEXFET series, rated for 30V drain-source voltage and 9.2A continuous drain current per channel at 25°C. Packaged in an 8-SOIC (0.154" width, 3.90mm body), it integrates two independent P-channel FETs in a single surface-mount package, saving board space in compact power designs.
Maximum Rds(on) of 16.3mOhm at Vgs=10V and Id=9.2A sets the conduction loss floor. At 9.2A, that's about 1.4W per channel — the 2W package power limit (total for both channels) means you need to derate if both channels run near full current simultaneously, or add copper area to the SO-8 footprint to keep junction temperature under 150°C. The logic-level gate threshold (2.4V max at 25µA) means a 3.3V or 5V GPIO can turn the FET fully on, though Rds(on) is specified at 10V. For 5V gate drive, expect higher on-resistance — check the typical curve in the datasheet. Gate charge of 38nC at 10V and input capacitance of 1740pF at 25V are moderate; a standard gate driver or even a microcontroller output with a series resistor can switch at tens of kHz without excessive cross-conduction.
Temperature range and environment
The 150°C maximum junction allows operation in engine bays, outdoor telecom enclosures, or industrial motor drives where ambient temperatures exceed 85°C — provided the PCB layout and heatsinking keep the junction below the limit at full load.
Sourcing and lifecycle posture
No last-time-buy or end-of-life notice on file. ROHS3 compliant. No official second-source cross-reference is recorded, so dual-sourcing would require qualification of an alternative P-channel dual in the same SO-8 footprint.