Infineon Technologies · HEXFET® Series
IRF9321TRPBF, HEXFET P-Channel MOSFET, 30V Vdss, 15A Id, 7.2mOhm Rds(on) at 10V, 98nC Qg, 8-SOIC package, -55°C to 150°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Ta) |
| Power dissipation | 2.5W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Vgs(th) (Max) @ id | 2.4V @ 50µA |
| Rds on (Max) @ id, vgs | 7.2mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 98 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2590 pF @ 25 V |
The IRF9321TRPBF: Total gate charge is 98 nC at 10 V.
The junction temperature range covers -55°C to 150°C, which qualifies the part for military, avionics, and downhole auxiliary power switching — not just industrial. The 2.5 W maximum power dissipation at 25°C ambient in the SO-8 package limits continuous current in still air; a 1 oz copper pad on the PCB drops the thermal resistance.
