IRF9317TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRF9317TRPBF, P-Channel MOSFET, 30 V Vdss, 16 A continuous drain, 6.6 mOhm Rds(on) at 10 V, 92 nC gate charge, 8-SOIC package, -55°C to 150°C.

Infineon Technologies IRF9317TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF9317TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.4V @ 50µA
Rds on (Max) @ id, vgs6.6mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2820 pF @ 15 V

Technical details

P-Channel load switch in an 8-SOIC

The P-Channel polarity means the source connects to the input rail and the drain to the load — no charge pump or level shifter needed for high-side switching.

What the 6.6 mOhm Rds(on) means for the BOM

At 16 A the conduction loss is I²R = 1.7 W, which exceeds the 2.5 W package dissipation at 25°C ambient — so the actual continuous current in a real board is derated by the ambient temperature and PCB copper area. The 2820 pF input capacitance at 15 V Vds is the capacitive load the upstream driver sees; it sets the drive current requirement for a given rise time. The 2.4 V max threshold at 50 µA means the device is fully enhanced with 4.5 V logic-level gate drive, though the 6.6 mOhm Rds(on) is specified at 10 V.

IRF9317TRPBF
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