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Infineon Technologies IRF9317TRPBF

IRF9317TRPBF P-Channel MOSFET, 30 V, 16 A, 6.6 mOhm

MPNIRF9317TRPBF
End of Life

Infineon HEXFET IRF9317TRPBF, P-Channel MOSFET, 30 V Vdss, 16 A continuous drain, 6.6 mOhm Rds(on) at 10 V, 92 nC gate charge, 8-SOIC package, -55°C to 150°C.

$1.01Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF9317TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C16A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.4V @ 50µA
Rds on (Max) @ id, vgs6.6mOhm @ 16A, 10V
Gate charge (Qg) (Max) @ vgs92 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2820 pF @ 15 V

Product details

P-Channel load switch in an 8-SOIC

The P-Channel polarity means the source connects to the input rail and the drain to the load — no charge pump or level shifter needed for high-side switching.

What the 6.6 mOhm Rds(on) means for the BOM

At 16 A the conduction loss is I²R = 1.7 W, which exceeds the 2.5 W package dissipation at 25°C ambient — so the actual continuous current in a real board is derated by the ambient temperature and PCB copper area. The 92 nC total gate charge at 10 V tells the driver design: a 1 A gate driver charges the gate in about 92 ns, but a typical MCU GPIO sourcing a few mA will take microseconds, stretching the switching transition and increasing crossover loss. The 2820 pF input capacitance at 15 V Vds is the capacitive load the upstream driver sees; it sets the drive current requirement for a given rise time. The 2.4 V max threshold at 50 µA means the device is fully enhanced with 4.5 V logic-level gate drive, though the 6.6 mOhm Rds(on) is specified at 10 V.

Frequently asked questions

What is an equivalent or replacement for IRF9317TRPBF?

No official second-source or cross-reference is listed for this part. The peer IPD50R950CEAUMA1 is a CoolMOS N-Channel device rated for 500 V and 4.3 A — it is not a functional replacement for a 30 V P-Channel load switch.