30 V, 24 A N-channel in an SO-8 — the 2.8 mOhm Rds(on) floor
Gate charge totals 66 nC at 4.5 V, a moderate figure that keeps switching losses manageable in the 100–200 kHz range.
At 2.8 mOhm max (10 V gate), this part is in the low-Rds(on) tier for a 30 V SO-8 FET — the buyer sizing a 12 V rail converter gets the conduction loss below 200 mW at 8 A, which keeps the SO-8 pad cool enough for a single-layer copper pour. The 66 nC gate charge at 4.5 V means a typical gate driver with 2 A peak source/sink can switch the FET in under 50 ns, suiting it for point-of-load regulators where board space is tight.
Temperature range and environment
The 150 °C Tj(max) gives headroom for a 24 A load in a 70 °C ambient as long as the PCB copper area keeps the case temperature below 125 °C — the SO-8's thermal resistance (2.5 W Ta) is the limit, not the silicon.