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Infineon Technologies IRF8736TRPBF

IRF8736TRPBF HEXFET N-Ch MOSFET, 30V 18A, 4.8mOhm Rds(on)

MPNIRF8736TRPBF
End of Life

IRF8736TRPBF, Infineon HEXFET N-Channel MOSFET, 30V Vdss, 18A Id, 4.8mOhm Rds(on) at 10V Vgs, 26nC Qg at 4.5V, 8-SOIC package, -55°C to 150°C.

$0.85Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRF8736TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C18A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.35V @ 50µA
Rds on (Max) @ id, vgs4.8mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2315 pF @ 15 V

Product details

The headline on-resistance of 4.8 mOhm (max at 18 A, 10 V Vgs) sets the conduction-loss floor for a low-voltage synchronous buck or load switch — but that figure assumes a 10 V gate drive, not the 4.5 V threshold. At 4.5 V drive the Rds(on) rises; the datasheet curve tells you how much. The 26 nC total gate charge at 4.5 V means a 1 A gate-driver can switch this FET at roughly 38 kHz before the driver's average current budget is consumed.

30 V / 18 A — what the ratings actually mean for your rail

The 18 A continuous drain rating is specified at 25 °C case temperature (Ta), not ambient — on a typical 1 oz copper, 1-square-inch pad on a 2-layer board, the actual current you can sustain is lower. The 2.5 W max power dissipation at 25 °C ambient is the thermal budget you have to work with; the SO-8 package's junction-to-ambient thermal resistance means the PCB copper area does the real heat sinking. For a 12 V input rail or a 5 V point-of-load converter, the 30 V drain rating gives about 1.5× derating margin — adequate for most non-automotive rails.

There is no official successor or pin-compatible second source listed in the Infineon documentation, so dual-sourcing would require a qualification effort on a functionally similar MOSFET from another vendor.

Package and footprint — standard SO-8, thermal via pattern matters

The 8-SOIC package (0.154-inch body width, 3.90 mm) uses the standard SO-8 footprint. The supplier device package is 8-SO. The 2.5 W dissipation limit at 25 °C ambient means the PCB copper area under the drain pins and a thermal via pattern are required to keep the junction below 150 °C at full load. The gate charge of 26 nC at 4.5 V is moderate — a typical 1 A gate driver can handle switching frequencies up to about 38 kHz before the average gate-drive current becomes a concern.

Frequently asked questions

Can IRF8736TRPBF be used as a replacement for the IRF8736?

The IRF8736TRPBF is the tape-and-reel variant of the base IRF8736 die in the same 8-SOIC package. The electrical specifications — 30 V drain, 18 A current, 4.8 mOhm Rds(on) — are identical. The TRPBF suffix indicates tape-and-reel packaging and ROHS3 compliance. It is a direct functional replacement for the IRF8736 in the same footprint.

Is IRF8736TRPBF RoHS compliant?

Yes, the IRF8736TRPBF is listed as ROHS3 compliant.