IRF8734TRPBF

Infineon Technologies · HEXFET® Series

MOSFET N-CH 30V 21A 8SO

Infineon Technologies IRF8734TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRF8734TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C21A (Ta)
Power dissipation2.5W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2.35V @ 50µA
Rds on (Max) @ id, vgs3.5mOhm @ 21A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3175 pF @ 15 V
IRF8734TRPBF
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